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| 7MBP300RA060 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 300A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current Symbol VDC Rating Min. VDC(surge) VSC VCES VR DC IC 1ms ICP Duty=55.5% -IC Collector power dissipation One transistor PC DB Collector current DC IC 1ms ICP Forward current of Diode IF Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC *1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM *3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Unit V V V V V A A A W A A A W C V V mA V mA C C kV N*m N*m Max. 450 500 400 600 600 300 600 300 1040 100 200 100 400 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 0 0 200 0 0 0 0 -40 -20 - Fig.1 Measurement of case temperature Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Symbol ICES VCE(sat) VF ICES VCE(sat) VF Condtion VCE=600V input terminal open Ic=300A -Ic=300A VCE=600V input terminal open Ic=100A -Ic=100A Min. - - - - - - Typ. - - - - - - Max. 1.0 2.8 3.0 1.0 2.8 3.0 Unit mA V V mA V V DB 7MBP300RA060 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. fsw=0 to 15kHz Tc=-20 to 100C *7 6 fsw=0 to 15kHz Tc=-20 to 100C *7 24 ON 1.00 1.35 OFF 1.70 2.05 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 20 surface of IGBT chips 150 20 Tj=125C 450 Tj=125C 150 Tj=25C Fig.2 10 11.0 0.2 1.5 2 Tj=25C Fig.3 1425 1500 Max. 32 114 1.70 2.40 125 12.5 12 1575 Unit mA mA V V V C C C C A A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=300A, VDC=300V IF=300A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance INV DB Case to fin thermal resistance with compound IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.12 0.25 0.31 Unit C/W C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 400 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 7MBP300RA060 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 7MBP300RA060 Characteristics (Representative) Control circuit IGBT-IPM P ow er su p ply c urre nt vs . S w itc hin g freq ue n cy T j= 10 0C 1 00 P o w er su p ply c urre n t : Ic c (m A ) Input signal threshold voltage : Vin(on),Vin(off) (V) P -side N -side 80 V cc= 1 3V 60 V cc= 1 7V V cc= 1 5V 2 2.5 Input signal threshold voltage vs. Power supply voltage Tj=25C Tj=125C } Vin(off) 1.5 } Vin(on) 40 V cc= 1 7V V cc= 1 5V V cc= 1 3V 1 20 0.5 0 0 5 10 15 20 S witch ing fre qu e nc y : fsw (k H z) 25 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Under voltage vs. Junction temperature 14 12 Under voltage hysterisis vs. Jnction temperature 1 Under voltage hysterisis : VH (V) 0.8 Under voltage : VUVT (V) 10 8 6 4 2 0 0.6 0.4 0.2 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time vs. Power supply voltage Over heating protection : TcOH,TjOH (C) OH hysterisis : TcH,TjH (C) 3 200 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Alarm hold time : tALM (mSec) 2.5 Tj=125C 2 Tj=25C 1.5 TjOH 150 TcOH 100 1 50 TcH,TjH 0.5 0 12 0 13 14 15 16 17 18 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) Power supply voltage : Vcc (V) 7MBP300RA060 Inverter IGBT-IPM C o lle cto r c u rren t v s. C o lle cto r-Em itter vo lta ge Tj= 2 5C 5 00 V c c= 1 7V C ollec to r C u rre nt : Ic (A ) V c c= 1 3V Collector Current : Ic (A) 4 00 400 V c c= 1 5V 500 Collector current vs. Collector-Emitter voltage Tj=125C Vcc=15V Vcc=17V Vcc=13V 3 00 300 2 00 200 1 00 100 0 0 0 .5 1 1 .5 2 2 .5 3 3 .5 C o lle cto r-E m itte r vo lta g e : V ce (V ) 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25C 10000 Switching time : ton,toff,tf (nSec) 10000 Switching time : ton,toff,tf (nSec) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125C toff 1000 ton toff ton 1000 tf tf 100 100 10 0 100 200 300 400 Collector current : Ic (A) 500 10 0 100 200 300 400 Collector current : Ic (A) 500 Forward current vs. Forward voltage 500 1000 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Reverse recovery characteristics trr,Irr vs. IF 400 Forward Current : If (A) 125C 25C trr125C trr25C 300 100 Irr125C Irr25C 200 100 0 0 0.5 1 1.5 2 2.5 3 Forward voltage : Vf (V) 10 0 100 200 300 400 500 Forward current : IF(A) 7MBP300RA060 IGBT-IPM Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) FWD IGBT 0.1 Collector current : Ic (A) 3000 2700 2400 2100 1800 1500 1200 900 600 300 0 0.01 0.1 1 0 0.001 Reversed biased safe operating area Vcc=15V,Tj < 125C = SCSOA (non-repetitive pulse) 0.01 RBSOA (Repetitive pulse) 100 200 300 400 500 600 700 0.001 Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 1200 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 600 500 400 300 200 100 0 0 20 Power derating for FWD (per device) 40 60 80 100 120 140 160 Case Temperature : Tc (C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 20 20 Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=125C Eon 15 15 10 Eon Eoff 10 Eoff 5 Err 0 0 50 100 150 200 250 300 Collector current : Ic (A) 5 Err 0 0 50 100 150 200 250 300 Collector current : Ic (A) 7MBP300RA060 IGBT-IPM 1200 Over current protection level : Ioc(A) 1000 Over current protection vs. Junction temperature Vcc=15V 800 600 400 200 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) 7MBP300RA060 Brake IGBT-IPM C olle cto r curren t vs. C olle cto r-E mitte r vo lta ge T j=25 C 160 Vcc=17V Vcc=13V 120 100 80 60 40 20 0 0 140 Vcc=15V Collector current vs. Collector-Emitter voltage Tj=125C 160 Vcc=17V Vcc=15V 140 120 100 80 60 40 20 0 Vcc=13V Collector Current : Ic (A) Collector Current : Ic (A) 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) T ra n s ie n t th e rm a l re sista n ce 1 Reversed biased safe operating area Vcc=15V,Tj < 125C = 1000 900 IGBT Thermal resistance : Rth(j-c) (C/W) 800 Collector current : Ic (A) 700 600 500 400 300 200 100 RBSOA (Repetitive pulse) 0 100 200 300 400 500 600 700 SCSOA (non-repetitive pulse) 0.1 0.01 0.001 0 0.01 0.1 1 Pulse w idth :Pw (sec) Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) Collecter Power Dissipation : Pc (W) Over current protection level : Ioc(A) 500 250 Over current protection vs. Junction temperature Vcc=15V 400 200 300 150 200 100 100 50 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 Case Temperature : Tc (C) Junction temperature : Tj( C) |
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